http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0433
Outgoing Links
| Predicate | Object |
|---|---|
| concordantIPC | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04 |
| level | 11^^<http://www.w3.org/2001/XMLSchema#integer> |
| symbol | G11C16/0433 |
| modified | 2013-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| title | Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and one or more separate select transistors |
| type | http://data.epo.org/linked-data/def/cpc/SubGroup |
| broader | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0408 |
Incoming Links
Total number of triples: 1479.