Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0483 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C8-18 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C29-808 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
filingDate |
2004-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23bdd7a1134702cf894c64a74c06b43e |
publicationDate |
2006-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2006127710-A |
titleOfInvention |
Nonvolatile semiconductor memory device |
abstract |
A nonvolatile semiconductor memory device capable of reducing power consumption is provided. A non-volatile semiconductor memory device is a non-volatile semiconductor memory device that repairs a defect by replacing a column of a memory cell array 10 with a redundancy bit line, and a row address signal for selecting a row direction of the memory cell array 10 The redundancy bit line is sensed only when the row address change detection circuit 91 detects a change in the row address signal. [Selection] Figure 4 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101407362-B1 |
priorityDate |
2004-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |