| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdad00677b9268c26e005a9e03a7b9dd |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C5-063 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C5-06 |
| filingDate |
2005-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43c2d1c754de56abc15315841e813a4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6c7b31bd0b73eac6a533aee9b035c8d |
| publicationDate |
2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7233513-B2 |
| titleOfInvention |
Semiconductor memory device with MOS transistors each having floating gate and control gate |
| abstract |
A semiconductor memory device includes memory cells, a memory cell array, word lines, a row decoder, first metal wiring layers, and metal wiring lines. The memory cell includes a first MOS transistor having a charge accumulation layer and a control gate. Each word line is formed by connecting commonly the control gates in a same row. The row decoder selects any one of the word lines. The first metal wiring layers are provided for the word lines in a one-to-one correspondence. The first metal wiring layers are electrically connected to the corresponding ones of the word lines and transmit a first row select signal for the row decoder to select one of the word lines. The metal wiring lines are formed at a plurality of levels. The first metal wiring layers are made of the metal wiring lines located at the level of the lowest layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9640546-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7636253-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8319265-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8698273-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692878-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910394-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010001404-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011221067-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2009122609-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2010038700-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8963226-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10396089-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10141324-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8368225-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8004014-B2 |
| priorityDate |
2004-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |