| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0433 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-70
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B10-125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-403 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 |
| filingDate |
2014-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2015-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015053977-A1 |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short channel effect is hardly caused is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by self-aligned process in which one or more elements selected from Group 15 elements are added to the semiconductor layer with the use of a gate electrode as a mask. The source region and the drain region can have a wurtzite crystal structure. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10741695-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10483404-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10032929-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9929276-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10439073-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10446668-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107623040-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11424368-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9748403-B2 |
| priorityDate |
2010-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |