http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201308521-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-403 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0433 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11 |
| filingDate | 2012-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38050205e61f011eb34906e56715545f |
| publicationDate | 2013-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201308521-A |
| titleOfInvention | Memory circuit and electronic device |
| abstract | A non-volatile memory circuit with a novel structure is proposed. A first memory circuit, a second memory circuit, a first switch, a second switch, and a phase inverter circuit are included. The first memory circuit includes a first transistor formed using an oxide semiconductor film, a second transistor, a third transistor, and a capacitor. The first transistor and capacitor formed using the oxide semiconductor film are used to form a non-volatile memory circuit. The reduction in the number of power supply lines and signal lines connected to the memory circuit and the transistors used in the memory circuit enables the circuit scale of the non-volatile memory circuit to be reduced. |
| priorityDate | 2011-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.