| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8ff538ed094988386084565bc7f62aeb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11519
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-11526
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7883 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11526
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11521
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11519
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-12 |
| filingDate |
2017-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05171e3fc36e1704b0b9e32dd9751506 |
| publicationDate |
2018-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2018033487-A1 |
| titleOfInvention |
Non-volatile memory with floating gate having protruding portion |
| abstract |
A memory cell includes a source region and a drain region disposed in a semiconductor body. A channel region is disposed in the semiconductor body between the source region and the drain region. A floating gate is disposed between the semiconductor body and the control gate. The floating gate includes a protruding portion that is located over the channel region between the source and drain regions and spaced therefrom. The protruding portion is separated from the channel region by a first insulating layer that is thinner than a second insulating layer that separates remaining portions of the floating gate from the channel region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10727239-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11696438-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019088665-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10679699-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031082-B2 |
| priorityDate |
2016-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |