| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a095bc347afce984be0a878f24ff4048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_52fbc7a78d211bb5d2d3a4333f664e8d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbb477cab6287ad715ceb612f63441ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6dda35d27b44345739da280404f20cbb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2216-06 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0466
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C16-0433 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-00 |
| filingDate |
2006-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_215a8faf6380a2ab86d67b7a05342a91
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47e25df219d726f4d50d8e0847cd6e7c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_329d75d96b1fe9f0d36ac6d36c9d8dcf |
| publicationDate |
2007-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007037823-A1 |
| titleOfInvention |
Non-volatile programmable memory cell for programmable logic array |
| abstract |
A non-volatile programmable memory cell suitable for use in a programmable logic array includes a non-volatile MOS transistor (22) of a first conductivity type in series with a volatile MOS transistor (24) of a second conductivity type. The non-volatile MOS transistor (22) may be a floating gate transistor, such as a flash transistor, or may be another type of non-volatile transistor such as a floating charge-trapping SONOS, MONOS transistor or a nano-crystal transistor. A volatile MOS transistor (24), an inverter or a buffer (20) may be driven by coupling its gate or input to the common connection between the non-volatile MOS transistor (22) and the volatile MOS transistor (22). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011511440-A |
| priorityDate |
2005-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |