| abstract |
It is an object of the present invention to provide a semiconductor device having a novel structure that can retain the contents of the memory even when no power is supplied, and there is no limit on the number of times of writing. A semiconductor device constructed using a memory cell containing a wide gap semiconductor, for example, an oxide semiconductor, and having a potential conversion circuit having a function of outputting a potential lower than a reference potential for reading from the memory cell. By using a wide gap semiconductor, it is possible to provide a semiconductor device capable of sufficiently reducing the off current of the transistors constituting the memory cell and maintaining information for a long time. |