| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f79b6ef5c6087af75d9f4227800e00a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_02168214e43f0a563f3f344683cf2e68 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 |
| filingDate |
2011-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83f853e4fd27d9ad4b30657f630005e4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_de2ae9a8857bd6faa3e211a3c3353958 |
| publicationDate |
2018-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9917109-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
A semiconductor device includes a wiring embedded in an insulating layer, an oxide semiconductor layer over the insulating layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate electrode provided to overlap with the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode. The insulating layer is formed so that part of a top surface of the wiring is exposed. The part of the top surface of the wiring is positioned higher than part of a surface of the insulating layer. The wiring in a region exposed from the insulating layer is electrically connected to the source electrode or the drain electrode. The root-mean-square roughness of a region which is part of the surface of the insulating layer and in contact with the oxide semiconductor layer is 1 nm or less. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014151692-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11282964-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658399-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10749033-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784259-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018076238-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10367012-B2 |
| priorityDate |
2010-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |