Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05B44-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
filingDate |
2012-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5563e68c7c10017c83fb15b655a22d87 |
publicationDate |
2015-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9076871-B2 |
titleOfInvention |
Semiconductor device and method for manufacturing the same |
abstract |
One embodiment of the present invention is a material which is suitable for a semiconductor included in a transistor, a diode, or the like. One embodiment of the present invention is an oxide material represented as InM1 X M2 (1-X) Zn Y O Z (0<X<1, 0<Y<1, and Z<1), where M1 is an element belonging to Group 13 and preferably Ga, and M2 is an element belonging to Group 4 or 14. Typically, the content of M2 is arranged to be greater than or equal to 1 atomic % and less than 50 atomic % of that of M1. Generation of oxygen vacancies can be suppressed in an oxide semiconductor material having the above composition. It is also possible to further improve reliability of a transistor with the oxide semiconductor material with the above composition by compensating oxygen vacancies with excessive oxygen. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11682562-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016181432-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9496413-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9947802-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9871059-B2 |
priorityDate |
2011-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |