| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_276518fa3949041905c636f468b1803c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_522c863ba467b26145265c84d296cd41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f7aed366d3d61e35b4c5e0c1a004ba6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_742d0cf9d35684b58c187085db8327e1 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-47573
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-441
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2011-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89b11c0a1284abe33707d3319d5e268b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd44a052c20ea73cae228dbc880098a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0efce6a4fab5986923f663aa18bb56b7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eff0b0eb49f61e24689843687b00d2aa |
| publicationDate |
2014-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8664097-B2 |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9252248-B2 |
| priorityDate |
2010-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |