| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0838
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0291
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2300-0871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0289
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2330-04 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3291 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-3291
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
| filingDate |
2017-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_75c6267d8c775da162e94c833c3742ac
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4d9be286624dc55ccecf0a4f6e26e04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2dd7e8962533ce279af427298f32941 |
| publicationDate |
2018-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9935129-B2 |
| titleOfInvention |
Semiconductor device, electronic component, and electronic device |
| abstract |
To provide a semiconductor device including a small-area circuit with high withstand voltage, an oxide semiconductor (OS) transistor is used as some of transistors included in a circuit handling an analog signal in a circuit to which high voltage is applied. The use of an OS transistor with high withstand voltage as a transistor requiring resistance to high voltage enables the circuit area to be reduced without lowering the performance, as compared to the case using a Si transistor. Furthermore, an OS transistor can be provided over a Si transistor, so that transistors using different semiconductor layers can be stacked, resulting in a much smaller circuit area. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2023020864-A1 |
| priorityDate |
2014-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |