http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10304961-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2017-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6295192012e7b0ed39e88002b8734a2d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f9ca94b41c5494b5281165c2196d215 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5563e68c7c10017c83fb15b655a22d87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b0269d5c15f3f7418da4d024371911a |
| publicationDate | 2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-10304961-B2 |
| titleOfInvention | Semiconductor device |
| abstract | A transistor having favorable electrical characteristics. A transistor suitable for miniaturization. A transistor having a high switching speed. One embodiment of the present invention is a semiconductor device that includes a transistor. The transistor includes an oxide semiconductor, a gate electrode, and a gate insulator. The oxide semiconductor includes a first region in which the oxide semiconductor and the gate electrode overlap with each other with the gate insulator positioned therebetween. The transistor has a threshold voltage higher than 0 V and a switching speed lower than 100 nanoseconds. |
| priorityDate | 2014-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 160.