| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2017-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71d50a7293caba9c14997027f9784f5a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91fc1d7421977967d3ec5770473160a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f27cd0472813d308f51d664fbe748bc5 |
| publicationDate |
2018-02-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9899536-B2 |
| titleOfInvention |
Method of forming semiconductor device with different energy gap oxide semiconductor stacked layers |
| abstract |
A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor device which includes a first oxide semiconductor layer which is in contact with a source electrode layer and a drain electrode layer and a second oxide semiconductor layer which serves as a main current path (channel) of a transistor is provided. The first oxide semiconductor layer serves as a buffer layer for preventing a constituent element of the source and drain electrode layers from diffusing into the channel. By providing the first oxide semiconductor layer, it is possible to prevent diffusion of the constituent element into an interface between the first oxide semiconductor layer and the second oxide semiconductor layer and into the second oxide semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11423844-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532755-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11430897-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11705525-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11152512-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11349032-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11380799-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11349006-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11626052-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11211501-B2 |
| priorityDate |
2012-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |