| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9d99309a99ff216bb233b3a0ff777244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_542425a15ccd4ff5597aff0a7a1170e1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_086084992e3c6fe1e5379c0ccb87ae28 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2012-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7856ae967e33f28692f89401eb5d6f42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dbcf0079313e49f7ac8e1e907b8b3d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdfe61e505787f705a83dbd590591d1b |
| publicationDate |
2017-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9799773-B2 |
| titleOfInvention |
Transistor and semiconductor device |
| abstract |
A transistor which withstands a high voltage and controls large electric power can be provided. A transistor is provided which includes a gate electrode, a gate insulating layer over the gate electrode, an oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode, and a source electrode and a drain electrode which are in contact with the oxide semiconductor layer and whose end portions overlap with the gate electrode. The gate insulating layer includes a first region overlapping with the end portion of the drain electrode and a second region adjacent to the first region. The first region has smaller capacitance than the second region. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11646380-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11217704-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269913-B2 |
| priorityDate |
2011-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |