Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-037 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K19-173 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C14-0054 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K19-173 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C14-00 |
filingDate |
2013-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01586b738d5c3da823a8b306e0b71efa http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bb761a089dba691e10fe050a316ea73 |
publicationDate |
2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8994400-B2 |
titleOfInvention |
Nonvolatile latch circuit and logic circuit, and semiconductor device using the same |
abstract |
To provide a novel nonvolatile latch circuit and a semiconductor device using the nonvolatile latch circuit, a nonvolatile latch circuit includes a latch portion having a loop structure where an output of a first element is electrically connected to an input of a second element, and an output of the second element is electrically connected to an input of the first element; and a data holding portion configured to hold data of the latch portion. In the data holding portion, a transistor using an oxide semiconductor as a semiconductor material for forming a channel formation region is used as a switching element. In addition, a capacitor electrically connected to a source electrode or a drain electrode of the transistor is included. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004882-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9692421-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9704882-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812217-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11574944-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10153301-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10002580-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825836-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812587-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10453863-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11374023-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9871143-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015177311-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10297296-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249347-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9971680-B2 |
priorityDate |
2009-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |