| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02J17-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02H9-046
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02J50-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-0701
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-0715
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06K19-07749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M7-217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0285 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M1-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M7-217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K17-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-077
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06K19-07
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-822
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02H9-04 |
| filingDate |
2015-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1bb34dac01fe786ce9ad2399c77187b |
| publicationDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9819256-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
To prevent damage on an element even when a voltage high enough to break the element is input. A semiconductor device of the invention operates with a first voltage and includes a protection circuit which changes the value of the first voltage when the absolute value of the first voltage is higher than a reference value. The protection circuit includes: a control signal generation circuit generating a second voltage based on the first voltage and outputting the generated second voltage; and a voltage control circuit. The voltage control circuit includes a transistor which has a source, a drain, and a gate, and which is turned on or off depending on the second voltage input to the gate and thus controls whether the value of the first voltage is changed based on the amount of current flowing between the source and the drain. The transistor also includes an oxide semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10224433-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249766-B2 |
| priorityDate |
2010-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |