Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02554 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
filingDate |
2013-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2014-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3fcf601d3c982647edb04227554ebd4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_10941373b6a864097266d70055b7c335 |
publicationDate |
2014-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8803146-B2 |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10411102-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11239332-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10665684-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9502573-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11715800-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9640668-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299815-B2 |
priorityDate |
2008-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |