Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec0be8ec32ada14fedf6fdff36a3f27d |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7828 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1602 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1eb8ae02be349996a4e53a3233c4c091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_656ad98fe097f55d5eec22d1f9d371b3 |
publicationDate |
2018-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
EP-3320563-A1 |
titleOfInvention |
Silicon carbide mosfet with integrated mos diode |
abstract |
A monolithically integrated MOS channel in gate-source shorted mode is used as a diode for the third quadrant conduction path for a power MOSFET. The MOS diode and MOSFET can be constructed in a variety of configurations including split-cell and trench. The devices may be formed of silicon carbide, gallium nitride, aluminum nitride, aluminum gallium nitride, diamond, or similar semiconductor. Low storage capacitance and low knee voltage for the MOS diode can be achieved by a variety of means. The MOS diode may be implemented with channel mobility enhancement materials, and/or have a very thin/high permittivity gate dielectric. The MOSFET gate conductor and MOS diode gate conductor may be made of polysilicon doped with opposite dopant types. The surface of the MOS diode dielectric may be implanted with cesium. |
priorityDate |
2015-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |