| abstract |
The present invention discloses a method comprising forming an isolation region extending into a semiconductor substrate, etching a top portion of the isolation region to form a recess in the isolation region and forming an extension into the recess and the isolation region One of the lower portions overlaps one of the gate stacks. A source region and a drain region are formed on opposite sides of the gate stack. The gate stack, the source region and the drain region are part of a metal oxide semiconductor device (MOS). |