| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fdf3b6ced3d7710ec0bc0addb67a1cc9 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2017-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f804000d767e858ac40266681d29806b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_507655b1a7a72e2280ab114695e4b3e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96794e61610847fa0f6272d92652a666
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ec4a5f3b5b74f7867c60d9dc292aa58 |
| publicationDate |
2017-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2017126801-A |
| titleOfInvention |
Semiconductor device |
| abstract |
An object of the present invention is to reduce hydrogen concentration and oxygen vacancies in an oxide semiconductor film. In addition, the reliability of a semiconductor device including a transistor including an oxide semiconductor film is improved. A base insulating film, an oxide semiconductor film provided over the base insulating film, a gate insulating film provided over the oxide semiconductor film, and an oxide semiconductor film overlapped with the gate insulating film And the gate insulating film has a g value of 2.01 by electron spin resonance, and the oxide semiconductor film has a g value of 1.93 by electron spin resonance. It is a semiconductor device that does not represent a signal. [Selection] Figure 1 |
| priorityDate |
2011-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |