http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105448739-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2015-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-105448739-B |
| titleOfInvention | Semiconductor device with gate structure and method of manufacturing the same |
| abstract | The present invention provides a semiconductor device and a method of manufacturing the same. The semiconductor device includes an active layer, a gate structure, spacers, and source/drain layers. The active layer is on the substrate and includes germanium. The active layer includes a first region having a first germanium concentration and a second region flanking the first region. The top surface of the second region becomes higher from a first portion of the second region adjacent to the first region toward a second portion of the second region remote from the first region, and the second region has a second germanium concentration that is less than the first germanium concentration . The gate structure is formed on the first region of the active layer. Spacers are formed on the second region of the active layer and contact sidewalls of the gate structure. The source/drain layer is adjacent to the second region of the active layer. |
| priorityDate | 2014-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.