| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1251
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-423 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09F9-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate |
2016-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2641126960ce64ceb87c3320a02f332c |
| publicationDate |
2017-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2017065199-A1 |
| titleOfInvention |
Semiconductor device and method for manufacturing same |
| abstract |
This semiconductor device comprises, on a substrate (10), a first thin film transistor (101) which comprises: an auxiliary gate electrode (12); a first insulating layer (14) that covers the auxiliary gate electrode; a main gate electrode (16) that is formed on the first insulating layer; a second insulating layer (18) that covers the main gate electrode; an oxide semiconductor layer (20) that has a multilayer structure including a first layer (20A) and a second layer (20B) that is arranged on the first layer and has a larger band gap than the first layer; and a first source electrode (22) and a first drain electrode (24). The oxide semiconductor layer (20) comprises: a gate facing region (20g) that overlaps the main gate electrode when viewed from the normal direction of the substrate; a source contact region that is in contact with the first source electrode (22); a drain contact region that is in contact with the first drain electrode; and offset regions (30s, 30d) that are arranged between the gate facing region and the source contact region and/or between the gate facing region and the drain contact region. At least a part of each offset region overlaps the auxiliary gate electrode (12), with the first insulating layer (14) and the second insulating layer (18) being interposed therebetween. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019186798-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7339407-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019046903-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7278365-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11374025-B2 |
| priorityDate |
2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |