| abstract |
A method for forming a SiOCN material layer, a material layer stack, a semiconductor device and a method for manufacturing the same, and a deposition apparatus, the method for forming a SiOCN material layer includes: providing a substrate; providing a silicon precursor on the substrate; reacting oxygen providing the first carbon precursor on the substrate; providing the second carbon precursor on the substrate; and providing the nitrogen reactant on the substrate, wherein the first carbon precursor and the first carbon precursor are Dicarbon precursors are different materials. |