http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
Outgoing Links
| Predicate | Object |
|---|---|
| concordantIPC | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| level | 11^^<http://www.w3.org/2001/XMLSchema#integer> |
| symbol | H01L29/4983 |
| modified | 2013-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| title | Metal-insulator-semiconductor electrodes, with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material |
| type | http://data.epo.org/linked-data/def/cpc/SubGroup |
| broader | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49 |
Incoming Links
Total number of triples: 3139.