| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4991 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2007-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3acd9bba42a1fd173966d1db3bba0f88
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f47ceea684ee2d7be4b2c2a7fedf704
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb10867edd9728cac2ca0cbed4fd2c5d |
| publicationDate |
2009-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090014628-A |
| titleOfInvention |
Manufacturing Method of Semiconductor Device |
| abstract |
The present invention discloses a method of forming an insulating film having an air gap that isolates the wiring or gate stack of a semiconductor device. A method of manufacturing a semiconductor device according to an embodiment of the present invention includes providing a semiconductor substrate on which a plurality of interconnections are formed; And forming an insulating film filling the upper portion of the space with an air gap in the space between the wirings by thermal chemical vapor deposition. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9786549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312136-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113555365-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11171041-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318377-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11742383-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113555365-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101487064-B1 |
| priorityDate |
2007-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |