| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-19041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-3192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3148
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31633 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-58 |
| filingDate |
2004-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8334801d89a61f583ef1e20065743f14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bb3010384e6abd4c7231c96ab628a632
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d7de60060bf8aebbc957a10bca12689
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d29dd8d509109d94202ec8ded0ca344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd11ea5baf61fc8e7b791ac24ed674fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8809da706d82bf990865771e07bf71e |
| publicationDate |
2005-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-200536004-A |
| titleOfInvention |
Silicon oxycarbide and silicon carbonitride based materials for mos devices |
| abstract |
In the preferred embodiment, a gate dielectric and an electrode are formed on a substrate. A pair of spacers is formed along opposite sidewall of the gate electrode and the gate dielectric. Spacers are preferably formed of SiCO based material or SiCN based material. The source and drain are then formed. A contact etch stop (CES) layer is formed on the source/drain regions and spacers. The CES layer is preferably formed of SiCO based material or SiCN based material. An Inter-Layer Dielectric (ILD) is then formed on the CES layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I469225-B |
| priorityDate |
2004-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |