abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a gate electrode having a polyside structure, and a method of manufacturing the same. In the gate electrode according to the present invention, a polysilicon layer, a barrier metal layer, and a metal silicide layer are sequentially stacked, and the barrier metal layer is It surrounds the lower side and both side walls of the metal silicide pattern. |