http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-201517138-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a916e03e9b9d6e2e9655219cd75abb5 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66719 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2014-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2dfcbea7556d5047e8810cdd083cdff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63771a8f9a8dacb89964c460a0e18fc0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93cc8e10dd8e36bf0f57be8e1c3da849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9734d3e4e0f072fe29cf057b3287f5d8 |
| publicationDate | 2015-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-201517138-A |
| titleOfInvention | Power field effect transistor, power field effect transistor device and method for manufacturing power field effect transistor |
| abstract | The invention provides a power field effect transistor, a power field effect transistor device and a method for manufacturing a power field effect transistor. In fabricating the power field effect transistor, one of the body driving steps of fabricating the body region of the power field effect transistor is shortened to allow the power field effect transistor to achieve a very low on-resistance. A pre-body driving step is added prior to the implanting step of the dopant in the body region. In the pre-body driving step and the body driving step, oxidizing sidewalls of one of the polycrystalline germanium layers of the power field effect transistor to obtain a power field effect transistor, and the power field effect transistor has an oxidized polysilicon layer on the sidewalls a layer, and the oxidized polysilicon layer is thick enough to prevent current from being injected into the source region of the power field effect transistor by the gate. |
| priorityDate | 2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.