| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_51d028c578ae85cb937b5b34a5129fbc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2005-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_091a7e8522130cb0e991ef6edf42b5ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1bbeeb385485ef93762ab37712bbc67b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01256746433fa298de5e1db9f79f600b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ef21934ad3d570854f3186f7521be6d |
| publicationDate |
2007-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20070003991-A |
| titleOfInvention |
Transistors and manufacturing methods thereof |
| abstract |
The transistor according to the present invention includes a gate electrode formed on a gate dielectric layer formed on a substrate. A pair of source / drain regions are formed in the substrate on both sides of the transversely opposite sidewall of the gate electrode. The gate electrode includes a pair of sidewall portions overlapping portions of the source / drain regions and a central portion formed on the gate dielectric layer on the substrate region between the source region and the drain region, the central portion having a first work function, The pair of sidewall portions have a second work function, and the second work function is different from the first work function. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9281372-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170059976-A |
| priorityDate |
2004-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |