| abstract |
Embodiment of the disclosure describes a kind of method for manufacturing the spin quantum bit devices component using the spin quantum bit based on dopant, and the spin quantum bit based on dopant is by including the spin quantum bit devices operated in semiconductor substrate layer by alms giver or acceptor dopants atom.This method comprises: first in semiconductor substrate layer a pair of of gate electrode provided above；And window construction then is provided between the first and second gate electrodes, the window construction is continuous solid body material, it extends between the first and second electrodes and covers the semiconductor substrate layer except opening is overcoating, to inject dopant atom in the semiconductor substrate layer by the opening.By using defined first gate process, this method can solve scalability challenge and creation is for manufacturing the certainty path of the spin quantum bit based on dopant in desired locations, to promote the wafer scale of the spin quantum bit devices based on dopant integrated for using in quantum calculation equipment. |