| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_beaff8169965bd7b4d7b6e35d6701a9d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7789 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8221
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-247
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2021-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_99fec4472973434f5ad30a60a75d3b0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6ff0aade84932eebecac34d6ee831791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a77f0a77f6211b203d4cb5d6d6b69576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_379ccd360e4e3f97da89f387f2fd2d7e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cebf1e04d988bf135482f0d0167440a |
| publicationDate |
2022-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102021131627-A1 |
| titleOfInvention |
FIN TRANSISTORS WITH SEMICONDUCTOR SPACERS |
| abstract |
From a general point of view, a transistor can include a fin having a proximal end and a distal end. The fin may include a dielectric portion extending longitudinally between the proximal end and the distal end and a semiconductor layer disposed on the dielectric portion. The semiconductor layer may extend longitudinally between the proximal end and the distal end. The transistor may further include a source region located at the proximal end of the fin and a drain region located at the distal end of the fin. The transistor may also include a gate dielectric layer disposed on a channel region of the semiconductor layer. The channel region may be located between the gate dielectric layer and the dielectric section. The channel region may extend longitudinally between the source region and the drain region. The transistor may further include a conductive gate electrode disposed on the gate dielectric layer. |
| priorityDate |
2020-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |