| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3387 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02329
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb618a76d500567ac7a43a055aa85d69
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f036c3e3663a0db59c6322b12dd00527 |
| publicationDate |
2013-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201304009-A |
| titleOfInvention |
Plasma nitriding treatment method |
| abstract |
[Problem] The etching resistance of the tantalum nitride film formed by the low temperature ALD method is improved. [Technical content] The plasma nitriding treatment method uses a plasma processing apparatus (100) including a processing container (1) having an opening at an upper portion, and a mounting table (2) on which the wafer (W) is placed, and A microwave transmitting plate (28) that plugs the opening of the processing container (1) and allows microwaves to pass therethrough, and a planar antenna (31) having a plurality of slots for introducing microwaves into the processing container (1). A plasma of the tantalum nitride film on the wafer (W) is subjected to plasma nitridation treatment by plasma in the processing container (1) to generate a processing gas containing a nitrogen-containing gas and a rare gas. The tantalum nitride film is a tantalum nitride film which is coated by a ALD method at a plating temperature of 400 ° C or lower, and is subjected to plasma nitridation treatment at a processing temperature at which the plating temperature in the ALD method is the upper limit. |
| priorityDate |
2011-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |