Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2019-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22749af96ebc50a82eb4bc0112ff3754 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5ae1321030ea7c8fb285421ec35b82c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afe2716f5f3ed8d1530c91a6d6d24f31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b8528438d454828a0157948eb00dc49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20329a13a852e7d3d5538c6114f22bac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bf644c469e19e9b200065ec50e433db4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_311f6359c6d96510d1fece3bc369b6a1 |
publicationDate |
2020-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10833170-B2 |
titleOfInvention |
Low-k gate spacer and methods for forming the same |
abstract |
Embodiments of the present disclosure relate to a FinFET device having gate spacers with reduced capacitance and methods for forming the FinFET device. Particularly, the FinFET device according to the present disclosure includes gate spacers formed by two or more depositions. The gate spacers are formed by depositing first and second materials at different times of processing to reduce parasitic capacitance between gate structures and contacts introduced after epitaxy growth of source/drain regions. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021057546-A1 |
priorityDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |