| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c63bc5ef3ae590b0603de4587961cac3 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4975
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2016-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e17fd03beb35414b14f8c3233c4e5ea |
| publicationDate |
2017-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-106935650-A |
| titleOfInvention |
Semiconductor device, manufacturing method thereof, memory unit, and electronic device |
| abstract |
A semiconductor device includes: a substrate including a trench; a gate dielectric layer formed over a surface of the trench; a gate electrode located in the trench at a level lower than an upper surface of the substrate and including a first buried a portion and a second buried portion over the first buried portion; and a first doped region and a second doped region formed in the substrate on both sides of the gate electrode and overlapping the second buried portion, Wherein, the first buried portion includes a first barrier having a first work function, and the second buried portion includes a second barrier having a second work function lower than the first work function. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110190054-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022188349-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109285835-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109285835-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111564441-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109285833-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109285833-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111564441-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111403388-A |
| priorityDate |
2015-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |