| abstract |
The present invention relates to insulated gate semiconductor devices with soft switching behavior. Disclosed are semiconductor devices and methods for producing the same. The semiconductor device includes: a plurality of device cells, each including a body region, a source region, and a gate electrode adjacent to the body region and dielectrically insulated from the body region by a gate dielectric; and a conductive gate layer including a gate electrode or electrical connection to the gate electrodes of multiple device cells. The gate layer is electrically connected to the gate conductor and includes at least one of an increased resistance region and a decreased resistance region. |