| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31155 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2019-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2be8d05c02f30a67e4a4683125246cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b33aef83a356edb88710dbe2040917da
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fe43b69a856ec7948fd28992465c10a |
| publicationDate |
2020-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2020343362-A1 |
| titleOfInvention |
Structure and formation method of semiconductor device with metal gate stack |
| abstract |
A structure and a formation method of a semiconductor device are provided. The method includes forming a dummy gate stack over a semiconductor substrate. The dummy gate stack has a dummy gate electrode and a dummy gate dielectric layer. The method also includes forming spacer elements over sidewalls of the dummy gate stack and partially removing the dummy gate electrode to form a recess. The method further includes partially removing the spacer elements to enlarge the recess and removing a remaining portion of the dummy gate electrode to expose the dummy gate dielectric layer. In addition, the method includes doping the spacer elements after the remaining portion of the dummy gate electrode is removed and removing the dummy gate dielectric layer. The method further includes forming a metal gate stack in the recess. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11710788-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11600695-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11195950-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11398384-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021376071-A1 |
| priorityDate |
2019-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |