| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B3-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53252 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B21-082 |
| filingDate |
2012-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2014532297-A |
| titleOfInvention |
Carbon-rich carbon boron nitride dielectric film, electronic device including the same, and method of forming the same |
| abstract |
PROBLEM TO BE SOLVED: To provide a carbon-rich carbon boron nitride dielectric film having a low dielectric constant and usable as a component in various electronic devices. A carbon rich boron boron dielectric film (14) having a dielectric constant equal to or less than 3.6 is provided, which is used as a component in a variety of electronic devices. . This carbon-rich carbon boron nitride dielectric film has the chemical formula C x B y N z , where x is 35 atomic percent or greater and y is from 6 atomic percent to 32 atomic percent. , Z is from 8 atomic percent to 33 atomic percent. [Selection] Figure 3 |
| priorityDate |
2011-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |