http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I647747-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_786a55964f0623938e701b4510cacfff |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1045 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66719 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66712 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2014-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0587aa2653698107d9f487bc379d19e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_38983aea801667a19bc1c0dbcb587071 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9ccfa76240d3add3882f82d5c19b7b06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_395c54909808c1c3534538e1c0f7f8ff |
| publicationDate | 2019-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I647747-B |
| titleOfInvention | Power field effect transistor, power field effect transistor device and method for manufacturing power field effect transistor |
| abstract | The invention provides a power field effect transistor, a power field effect transistor device and a method for manufacturing a power field effect transistor. In fabricating the power field effect transistor, one of the body driving steps of fabricating the body region of the power field effect transistor is shortened to allow the power field effect transistor to achieve a very low on-resistance. A pre-body driving step is added prior to the implanting step of the dopant in the body region. In the pre-body driving step and the body driving step, oxidizing sidewalls of one of the polycrystalline germanium layers of the power field effect transistor to obtain a power field effect transistor, and the power field effect transistor has an oxidized polysilicon layer on the sidewalls a layer, and the oxidized polysilicon layer is thick enough to prevent current from being injected into the source region of the power field effect transistor by the gate. |
| priorityDate | 2013-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.