| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66689
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
| filingDate |
2015-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_42b026409be6194ed4bf17e87aef78af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a40be52d335cfe83415aa701b55921e |
| publicationDate |
2017-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2017025442-A1 |
| titleOfInvention |
Method including a formation of a transistor and semiconductor structure including a first transistor and a second transistor |
| abstract |
A method includes providing a semiconductor-on-insulator structure including a semiconductor substrate, a layer of electrically insulating material over the semiconductor substrate and a layer of semiconductor material over the layer of electrically insulating material. A first transistor is formed. The formation of the first transistor includes forming a dummy gate structure over the layer of semiconductor material, forming a source region of the first transistor and a drain region of the first transistor in portions of the semiconductor substrate adjacent the dummy gate structure, forming an electrically insulating structure annularly enclosing the dummy gate structure and performing a replacement gate process. The replacement gate process includes removing the dummy gate structure and a portion of the layer of semiconductor material below the dummy gate structure, wherein a recess is formed in the electrically insulating structure. The recess is filled with an electrically conductive material. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113809165-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10790279-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10930757-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11316036-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302691-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021118876-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2022406662-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9728543-B1 |
| priorityDate |
2015-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |