| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41791
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 |
| filingDate |
2018-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5ae1321030ea7c8fb285421ec35b82c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_311f6359c6d96510d1fece3bc369b6a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b60fd4aee390382c8e15de3dcfe82d46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1de17f6985e6fc1a1989ece0e4146bf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b3c0eea8411d8c3f558d02c579a0499
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_482244aca5a86e4371c578705fecea37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5df9b73deacb7209bf3629a53e284777
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afe2716f5f3ed8d1530c91a6d6d24f31 |
| publicationDate |
2019-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10283624-B1 |
| titleOfInvention |
Semiconductor structure and method for forming the same |
| abstract |
A semiconductor device and a method for forming the same are provided. The method includes forming a gate structure over a fin structure. The method further includes forming first gate spacers on opposite sidewalls of the gate structure. The method further includes forming source/drain features in the fin structure and adjacent to the first gate spacers. The method further includes performing a surface treatment process on top surfaces of the source/drain features and outer sidewalls of the first gate spacers. The method further includes depositing a contact etch stop layer (CESL) over the source/drain features and the first gate spacers. A first portion of the CESL is deposited over the top surfaces of the source/drain features at a first deposition rate. A second portion of the CESL is deposited over the outer sidewalls of the first gate spacers at a second deposition rate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020135874-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937876-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021391435-A1 |
| priorityDate |
2017-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |