| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4983
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2020-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c71cfd1ae0bf8928f8c7a557a038384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1de17f6985e6fc1a1989ece0e4146bf1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_482244aca5a86e4371c578705fecea37
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afe2716f5f3ed8d1530c91a6d6d24f31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5ae1321030ea7c8fb285421ec35b82c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_311f6359c6d96510d1fece3bc369b6a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae1ab45fceb3d026840bba36b06c4b03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a656cb1ec16fdd77c9db6a400eeba71b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b60fd4aee390382c8e15de3dcfe82d46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dc09167cc6cf6404e0b22472ef095f2 |
| publicationDate |
2021-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-11133229-B2 |
| titleOfInvention |
Forming transistor by selectively growing gate spacer |
| abstract |
A method includes forming a gate dielectric layer on a semiconductor fin, and forming a gate electrode over the gate dielectric layer. The gate electrode extends on sidewalls and a top surface of the semiconductor fin. A gate spacer is selectively deposited on a sidewall of the gate electrode. An exposed portion of the gate dielectric layer is free from a same material for forming the gate spacer deposited thereon. The method further includes etching the gate dielectric layer using the gate spacer as an etching mask to expose a portion of the semiconductor fin, and forming an epitaxy semiconductor region based on the semiconductor fin. |
| priorityDate |
2017-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |