| abstract |
A semiconductor structure includes a metal gate (MG) structure formed over a substrate, a first gate spacer formed on a first sidewall of the MG, a second gate spacer formed on a second sidewall of the MG is formed opposite the first sidewall, where the second gate spacer is shorter than the first gate spacer, a source / drain contact (S / D contact) (MD) next to the MG, where a sidewall of the MD passes through the second Gate spacer is separated, and a contact feature configured to electrically connect the MG to the MD. |