| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78609 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2015-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09ce8aa0d2a1a769ef59d6a115260955
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd |
| publicationDate |
2015-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2015073138-A |
| titleOfInvention |
Semiconductor device and manufacturing method of semiconductor device |
| abstract |
In a semiconductor device manufactured using an SOI substrate, a semiconductor device improved in reliability by preventing a defect caused by an end portion of a silicon layer provided in an island shape and a manufacturing method thereof are provided. An SOI substrate in which an insulating layer and an island-shaped silicon layer are sequentially stacked on a supporting substrate, a gate insulating layer provided on one surface and side surfaces of the island-shaped silicon layer, and a gate insulating layer interposed therebetween. And a gate electrode provided on the island-shaped silicon layer. At this time, the gate insulating layer reduces the dielectric constant of the region in contact with the side surface of the island-shaped silicon layer as compared with the one surface of the island-shaped silicon layer. [Selection] Figure 1 |
| priorityDate |
2006-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |