| abstract |
A method for fabricating a semiconductor structure includes providing a substrate including a core region (II) and a peripheral region (I), forming a plurality of first fin structures in the peripheral region and a plurality of second fin structures in the core region, forming a first dummy gate structure including a first dummy oxide layer and a first dummy gate electrode layer on each first fin structure, and forming a second dummy gate structure including a second dummy oxide layer and a second dummy gate electrode layer on each second fin structure. The method further includes removing each first dummy gate structure and then forming a first gate oxide layer (470) on the exposed portion of each first fin structure, and removing each second dummy gate structure. Finally, the method includes forming a first gate structure on each first fin structure and a second gate structure on each second fin structure. |