| abstract |
A method of fabricating a semiconductor device, the method comprising: forming a silicon carbide semiconductor substrate (102) having a plurality of first doped regions (104) laterally spaced from each other and disposed below a major surface (105) of the silicon carbide semiconductor substrate (102), a second doped one A region (106) extending from the main surface (105) to a third doped region (108) disposed above the first doped regions (104) and a plurality of fourth doped regions (122) extending from the major surface (105) to the first doped regions (104), the second doped region (106) having a first conductivity type, and the first doped regions (104), the third doped region (108), and the fourth doped regions (122) annealing the silicon carbide semiconductor substrate to dopant atoms in the second doped one Activating a gate trench (142) extending through the second doped region (106) and the third doped region (108); performing a high temperature step in a non-oxide and non-nitride forming atmosphere to deposit silicon carbide atoms along sidewalls (124, 144) of the gate trench (142) realign and produce rounded corners between the bottom (112) and side walls (124, 144) of the gate trench (142); and removing a surface layer formed along the sidewalls (124, 144) of the gate trench (142) during the high temperature step from the silicon carbide semiconductor substrate (102). |