http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015179787-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1584c21cf27f9e557aec39240422a393
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02549
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
filingDate 2014-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7b02588feeccb858c5db152e44d10ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a448c79e6376a23d2481d820dc77f7ee
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acb43de609f9b8ccfd3e6a5b6a5bb895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cdc240c5b197faf8bdcc53f0e522df0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8d42a58d055bddca952cb8be2c5d21a
publicationDate 2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-2015179787-A1
titleOfInvention Group iii-v semiconductor transistor and method of manufacturing the same
abstract Provided are group III-V semiconductor transistors and methods of manufacturing the same. The method includes forming a group III-V semiconductor channel layer on a substrate, forming a gate insulating layer covering the group III-V semiconductor channel layer, and forming a protection layer including sulfur between the group III-V semiconductor channel layer and the gate insulating layer by annealing the substrate under a sulfur atmosphere.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109103087-A
priorityDate 2013-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011298050-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007123003-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014256105-A1
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID402
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3468413
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524988
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451818717
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559526
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9989226
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419520488
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID292779

Total number of triples: 45.