Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1584c21cf27f9e557aec39240422a393 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02543 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02549 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2014-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7b02588feeccb858c5db152e44d10ea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a448c79e6376a23d2481d820dc77f7ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_acb43de609f9b8ccfd3e6a5b6a5bb895 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cdc240c5b197faf8bdcc53f0e522df0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8d42a58d055bddca952cb8be2c5d21a |
publicationDate |
2015-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2015179787-A1 |
titleOfInvention |
Group iii-v semiconductor transistor and method of manufacturing the same |
abstract |
Provided are group III-V semiconductor transistors and methods of manufacturing the same. The method includes forming a group III-V semiconductor channel layer on a substrate, forming a gate insulating layer covering the group III-V semiconductor channel layer, and forming a protection layer including sulfur between the group III-V semiconductor channel layer and the gate insulating layer by annealing the substrate under a sulfur atmosphere. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109103087-A |
priorityDate |
2013-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |