Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6ce9ffce41948cb062486d2c71703465 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4933 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823443 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66492 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66515 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66575 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2015-09-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6038362c6ecc7d2516ba4ff79ce0d290 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7c781e1acc5fd73be6b23ed6cdee141 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aacba1130b504ab58c3db07d9860613f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2ec18289c3a347f7f901a930d03708e |
publicationDate |
2018-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-2018012890-A1 |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
A manufacturing method of a semiconductor device, comprising the following steps: providing a semiconductor substrate comprising a low-voltage device region and a high-voltage device region; forming first gate oxide layers in a non-gate region of the high-voltage device region and the low-voltage device region and a second gate oxide layer in a gate region of the high-voltage device region; the thickness of the second gate oxide layer is greater than the thickness of the first gate oxide layer; forming a first polysilicon gate and a first sidewall structure on the surface of the first gate oxide layer of the low-voltage device region and a second polysilicon gate and a second sidewall structure on the surface of the second gate oxide layer; the width of the second gate oxide layer is greater than the width of the second polysilicon gate; performing source drain ions injection to form a source drain extraction region; after depositing a metal silicide area block (SAB), performing a photolithographic etching on the metal SAB and forming metal silicide. The above manufacturing method of a semiconductor device simplifies process steps and reduces process cost. The present invention also relates to a semiconductor device. |
priorityDate |
2015-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |