| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6af9a57049d2d91c036d4f5ab49154cb |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2013-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d3679534cd2afe18591f7aea8aa5115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_baaabccafbe39385d4a321a4b007f3f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddf39d3d121df0a547c22a600bf90888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cb6cc7a050a09fdf00a6fef2b7e438ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e993ec688971a824d8e5de185e3439fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a573b4455e7c91d71ede16df93b57e5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ff170f306809f847544521b403d9dcc0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f764c4aaa356aa01174eaa8acdab26b7 |
| publicationDate |
2015-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015084131-A1 |
| titleOfInvention |
Gate height uniformity in semiconductor devices |
| abstract |
Methods of facilitating gate height uniformity by controlling recessing of dielectric material and semiconductor devices formed from the methods are provided. The methods include, for instance, forming a transistor of the semiconductor device with an n-type transistor and a p-type transistor, the n-type transistor and the p-type transistor including plurality of sacrificial gate structures and protective masks at upper surfaces of the plurality of sacrificial gate structures; providing a dielectric material over and between the plurality of sacrificial gate structures; partially densifying the dielectric material to form a partially densified dielectric material; further densifying the partially densified dielectric material to create a modified dielectric material; and creating substantially planar surface on the modified dielectric material, to control dielectric material recess and gate height. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109560046-A |
| priorityDate |
2013-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |