| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28202 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
2018-03-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91dae2061d8cdace1a660a24f38729e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37de838e9b9001c354bb8a4a991d2d8c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21396ba994c223b0e01f610eb87369a1 |
| publicationDate |
2020-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10629749-B2 |
| titleOfInvention |
Method of treating interfacial layer on silicon germanium |
| abstract |
A method includes forming a channel region on a semiconductor substrate. An interfacial layer is formed on the channel region. The interfacial layer is treated with trimethyl aluminum (TMA). A high-k dielectric layer is formed on the interfacial layer after treating the interfacial layer with TMA. A gate electrode is formed on the high-k dielectric layer. The treating the interfacial layer with TMA and forming the high-k dielectric layer are performed in the same chamber. The interfacial layer is annealed before treating the interfacial layer with TMA. The annealing the interfacial layer and treating the interfacial layer with TMA are performed in different chambers. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031508-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11688812-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2021296507-A1 |
| priorityDate |
2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |